PS Irradiation October 2000 - VAL_K3_166

Pre-Irradiation Characterization

A set of reference data was taken in B186 before the irradiation started. Ipre = 220, Ishpr = 20, Edge Off, Compression Mode 1.

Evolution of Analogue Parameters

The analogue parameters are monitored during the irradiation, by means of threshold scans for input charges Qin = {1.0, 1.5, 2.0, 2.5} fC. This is done for Preamplifier currents Ipre = {100, 150, 200, 250} uA and shaper currents Ishpr = {20, 30} uA. These scans are fitted with a linear response curve to extract the parameters.

Post-Irradiation Characterization

Optimisation of preamplifier currents:

Digital Perfomance

Operating range before irradiation:

Clock duty cylcle (SLOG A02) (measured at crate level) After irradiation, correct digital response is received by:

@ Vdd = 4.0V    OK if S3, S5, S9, S11, S12, S12 & E13 bypassed
@ Vdd = 4.3V    OK if S3, S9, S11, S12, E13 bypassed
@ Vdd = 4.0V    OK if S3 & S11 bypassed
@ Vdd = 4.8V    All chips OK

Chip origin: Batch 34685, Wafer ID5
 
Chip
M0
S1
S2
S3
S4
E5
M8
S9
S10
S11
S12
E13
X
9
10
11
7
5
8
10
14
4
7
11
13
Y
1
2
2
3
4
4
4
4
5
5
3
5

Power consumption

Before irradiation: (Vdd = 4.0V, Vcc = 3.5V, Vth = 500mV, Ipre = 220, Ishpr = 20)

Plots before irradiation (chips trimmed 1fC represents 82.5 mV, LVDS drivers not subtracted):

* All tests before irradiation made at Vbias = 135 V. Resistance on the PT1000 = 1040 Ohms (temperature to be calibrated).